BUK764R2-80E,118

$3.95

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6da9347326cc Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10426 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：324W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK764R2-80E,118

Overview

The BUK764R2-80E,118 is a single N-channel silicon MOSFET from Nexperia, housed in a D2PAK (TO-263-3) surface-mount package. It features an 80 V drain-source voltage rating and supports a continuous drain current of 120 A at case temperature. The device exhibits a maximum on-resistance of 2 mΩ, enabling efficient power switching with low conduction losses. It operates within a junction temperature range of -55 °C to +175 °C and offers a power dissipation capacity of 324 W under specified thermal conditions.

Feature Summary

High-current capability with 120 A continuous drain current rating for robust power handling
Ultra-low on-state resistance of 2 mΩ to minimize conduction losses and heat generation
Enhanced avalanche ruggedness designed to withstand repetitive and single-shot avalanche energy events
Extended thermal operating range supporting junction temperatures up to 175 °C

Applications

DC-DC converters and synchronous rectification circuits
Motor control systems and high-power load switching
Industrial power supplies and battery management systems

Procurement Notes

Verify the complete part number including the suffix ,118 to ensure correct packaging configuration. Confirm RoHS compliance status through official Nexperia documentation prior to integration. Cross-reference datasheet revisions to validate electrical parameters against current production batches. Ensure thermal management design aligns with the specified 324 W power dissipation limits.

Selection Notes

Select this component when high current density and low conduction loss are critical requirements. The 2 mΩ on-resistance makes it suitable for applications demanding high efficiency. Verify that the system voltage does not exceed the 80 V breakdown limit. Consider the D2PAK package for its balance of thermal performance and board space efficiency compared to smaller packages.

Part Context

This device belongs to the BUK76 series of high-performance N-channel MOSFETs from Nexperia. The series is engineered for general-purpose power switching applications requiring high reliability. The specific model integrates advanced silicon technology to achieve superior figure-of-merit values, balancing switching speed and conduction resistance for optimal system performance.