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The BUK765R0-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device supports a total power dissipation of 349 W under the same conditions. Its maximum on-state resistance is 5 mΩ at 25 A and 10 V gate drive, with a typical value of 3.9 mΩ. The component is rated for junction temperatures up to 175 °C and complies with the AEC-Q101 automotive qualification standard.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the latest product data sheet to validate current production status and any potential design changes or obsolescence notices before finalizing procurement orders.
Select this component for circuits requiring high current handling capabilities within a 100 V voltage range. The low on-state resistance minimizes conduction losses during operation. Ensure the thermal management design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the standard level gate requirements for optimal switching performance and efficiency.
This device belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is designed specifically for automotive applications requiring high reliability and ruggedness. The SOT404 package provides efficient thermal transfer through the mounting base. The product integrates advanced trench technology to achieve superior performance metrics compared to conventional planar devices.
No public confirmed substitute part numbers are available in the provided source material.