BUK765R0-100E,118

BUK765R0-100E,118

$4.03
  • Description:MOSFET N-CH 100V 120A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:556b05424ed6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 120A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:11810 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):357W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK765R0-100E,118

Overview

The BUK765R0-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device supports a total power dissipation of 349 W under the same conditions. Its maximum on-state resistance is 5 mΩ at 25 A and 10 V gate drive, with a typical value of 3.9 mΩ. The component is rated for junction temperatures up to 175 °C and complies with the AEC-Q101 automotive qualification standard.

Feature Summary

  • Compliant with AEC-Q101 standards for high-performance automotive applications
  • Repetitive avalanche rated for robust operation in demanding environments
  • Suitable for thermally demanding environments due to 175 °C rating
  • True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

  • 12V, 24V and 48V Automotive systems
  • Electric and electro-hydraulic power steering
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the requested part number matches the exact electrical specifications required for the target application. Cross-reference the latest product data sheet to validate current production status and any potential design changes or obsolescence notices before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring high current handling capabilities within a 100 V voltage range. The low on-state resistance minimizes conduction losses during operation. Ensure the thermal management design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the standard level gate requirements for optimal switching performance and efficiency.

Part Context

This device belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is designed specifically for automotive applications requiring high reliability and ruggedness. The SOT404 package provides efficient thermal transfer through the mounting base. The product integrates advanced trench technology to achieve superior performance metrics compared to conventional planar devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

BUK765R0-100E,118BUK765R0-100E,118
$4.03
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