BUK765R2-40B,118

$1.63

Description：MOSFET N-CH 40V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:baa1743cde13 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3789 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：203W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK765R2-40B,118

Overview

The BUK765R2-40B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 4.4 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 203 W under specified conditions, with a maximum junction temperature rating of 175 °C.

Feature Summary

Compliant with the Q101 automotive qualification standard for critical applications.
Compatible with standard level gate drive sources for simplified circuit design.
Rated for operation in thermally demanding environments up to 175 °C.

Applications

Automotive systems
12 V loads
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Ensure the component meets the required AEC-Q101 qualification status for your target application. Cross-reference the datasheet revision date to confirm the validity of electrical parameters before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust automotive-grade performance with standard logic-level gate drive compatibility. The low on-state resistance minimizes conduction losses in high-current scenarios. Verify thermal management requirements align with the 175 °C junction temperature limit and the specific power dissipation capabilities of the D2PAK package.

Part Context

This part belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs designed for automotive use. It utilizes advanced trench gate technology to achieve low on-resistance within a plastic surface-mounted package. The series is engineered to meet stringent automotive reliability standards while supporting general-purpose power switching tasks.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical characteristics and thermal performance against the original specification sheet.