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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2772 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：137W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK765R3-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a D2PAK (SOT404) plastic surface-mounted package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 75 A at 25 °C mounting base temperature, and total power dissipation of 137 W. The device features a typical on-state resistance of 4.2 mΩ at 25 °C and 9.3 mΩ at 175 °C junction temperature. It supports a junction temperature range from -55 °C to 175 °C.
Feature Summary
- Compliant with AEC-Q101 qualification standards for automotive use
- Rated for repetitive avalanche energy operation
- Operates reliably in thermally demanding environments up to 175 °C
- Features true standard level gate characteristics with threshold voltage greater than 1 V at maximum operating temperature
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package version and marking codes. Confirm that the component status remains active or qualified for new designs before finalizing procurement plans. Cross-reference the requested part number with official Nexperia databases to validate availability and compliance with current environmental directives such as RoHS and REACH requirements.
Selection Notes
Select this component for circuits requiring robust automotive-grade reliability and high current handling capabilities within a 40 V system. The low on-state resistance minimizes conduction losses during operation. Ensure the thermal management design accommodates the specified junction-to-mounting base thermal resistance. Verify that the gate drive voltage aligns with the standard level gate requirements for optimal switching performance.
Part Context
This device belongs to the Nexperia BUK76 series of N-channel TrenchMOS FETs. It is specifically engineered for automotive electronics where durability under harsh conditions is critical. The SOT404 package provides efficient heat dissipation through the exposed mounting base, facilitating integration into power modules and control units designed for modern vehicle electrical architectures.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other packages without explicit datasheet confirmation.
FAQ
What is the maximum non-repetitive drain-source avalanche energy rating?
The device is rated for 131 mJ of non-repetitive drain-source avalanche energy under specified test conditions.
How does the gate-source threshold voltage behave at high temperatures?
The gate-source threshold voltage remains greater than 1 V even at a junction temperature of 175 °C, ensuring reliable turn-on characteristics in hot environments.
