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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7380 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK768R1-100E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in a SOT404 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 6.4 mΩ at 25 °C and 21.9 mΩ at 175 °C junction temperature. Total power dissipation reaches 263 W at 25 °C. It supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 compliant for high-performance automotive applications
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments with a 175 °C rating
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12V, 24V and 48V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component matches the required SOT404 package variant. Confirm compliance with RoHS and REACH standards relevant to your region before finalizing procurement. Cross-reference the marking code BUK768R1-100E with physical samples to prevent counterfeit risks during assembly.
Selection Notes
Select this component for designs requiring high current handling in automotive environments. The low on-state resistance minimizes conduction losses. Verify thermal management strategies to maintain junction temperatures within limits. Consider the gate charge characteristics for switching frequency requirements. Ensure the application voltage does not exceed the 100 V drain-source rating under all operating conditions.
Part Context
This part belongs to the Nexperia BUK768 series of N-channel TrenchMOS FETs. It is designed specifically for automotive use, meeting AEC-Q101 qualification standards. The SOT404 package provides efficient heat dissipation through the mounting base. It serves as a power switching solution for vehicle electrical systems and motor control applications.
Replacement Considerations
Check for direct substitutes within the BUK768 family that may offer different current ratings or package options. Verify pin compatibility and thermal resistance values when considering alternative manufacturers. Ensure any replacement meets the same AEC-Q101 automotive qualification requirements.
