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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK768R1-40E,118 is a single N-channel Power MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology to achieve low on-resistance and efficient switching performance. The device is housed in a D2PAK (SOT404) surface-mount package. Key electrical parameters include a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 75 A at case temperature. The maximum gate-source voltage (Vgs) is rated at 20 V. The component supports an operating junction temperature range from -55 °C to +175 °C.
Feature Summary
- Low on-state resistance for high efficiency
- Enhanced switching performance via TrenchMOS technology
- Robust construction for demanding power applications
Applications
- Battery-powered tools
- Load switching circuits
- Motor control systems
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component when a 40 V rating with high current capacity is required in a D2PAK package. Ensure thermal management aligns with the 75 A continuous current specification. Confirm that the 20 V gate drive capability matches the system logic levels. Compare against other Nexperia BUK76 series variants if different voltage or current ratings are needed.
Part Context
This part belongs to the Nexperia BUK76 series of single N-channel MOSFETs. These devices are designed using TrenchMOS technology to offer superior performance compared to standard planar technologies. The series targets applications requiring high efficiency and robustness in compact surface-mount packages.
Replacement Considerations
Check for direct substitutes within the BUK76 series with matching Vds and Id ratings. Verify pinout compatibility and thermal characteristics before substitution.
