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Product Detailed Parameters
- Description：NEXPERIA BUK769R6-80E - 75A, 80V
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：59.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4682 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：182W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK769R6-80E,118 is an N-channel TrenchMOS standard level MOSFET designed for high-performance automotive applications. It features a repetitive avalanche rating and supports operation in thermally demanding environments with a junction temperature up to 175 °C. The device utilizes true standard level gate technology, ensuring a Vgs(th) rating greater than 1 V at 175 °C. Qualified to the AEC-Q101 standard, it provides robust switching capabilities for power management systems.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Repetitive avalanche rated for rugged operation
- Standard level gate drive compatibility
- High thermal stability up to 175 °C
Applications
- 12V, 24V and 48V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix '118' corresponds to the required tape and reel configuration when ordering. Confirm that the component meets the AEC-Q101 qualification requirements for your target automotive application. Ensure the D2PAK package dimensions align with your PCB layout constraints. Check for any recent Product Change Notifications (PCN) regarding marking or packaging updates from Nexperia before finalizing procurement.
Selection Notes
Select this component for applications requiring standard level gate drive compatibility combined with high current handling. The 175 °C junction temperature rating makes it suitable for thermally constrained automotive environments. Consider the repetitive avalanche capability if the circuit is subject to inductive load switching. Verify that the gate threshold voltage characteristics meet the logic interface requirements of the driving controller.
Part Context
This part belongs to the BUK763/BUK769 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered specifically for automotive use, offering a balance of low on-resistance and robust thermal performance. The series is characterized by its standard level gate drive, simplifying integration with common automotive microcontrollers and drivers without requiring additional level-shifting circuitry.
Replacement Considerations
Direct replacements within the same family include BUK763R8-80E. Verify pinout compatibility and electrical parameters such as Rds(on) and Id ratings against the original design specifications before substitution.
