BUK78150-55A/CUX

$0.35

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9f4afb74220d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK78150-55A/CUX

Overview

The BUK78150-55A/CUX is an N-channel TrenchMOS standard level FET in a SOT-223 package. It features a drain-source voltage of 55 V and a continuous drain current of 5.5 A at 25 °C. The device has a maximum on-state resistance of 150 mΩ at VGS=10V, ID=5A, and 25 °C. Total power dissipation is 8 W at 25 °C. It operates within a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 standards for automotive applications.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for standard level gate drive sources

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific suffix CUX against the official Nexperia ordering information table to confirm the exact packaging variant (e.g., reel or cut tape). Ensure the component status remains active by consulting the latest product data sheet revision history. Confirm that the requested quantity aligns with the manufacturer's standard packing specifications for the selected package version.

Selection Notes

Select this component for designs requiring robust performance in 12 V or 24 V systems. The SOT-223 package provides increased heatsink capability suitable for moderate power dissipation needs. Verify that the gate drive source matches the standard level requirements specified in the datasheet to ensure optimal switching characteristics and thermal management within the allowed junction temperature limits.

Part Context

This part belongs to the Nexperia BUK78150 series of N-channel TrenchMOS standard level FETs. The series utilizes advanced trench technology to achieve low on-state resistance. These devices are designed for plastic surface-mounted packages, offering a balance between electrical performance and thermal efficiency for compact circuit board layouts in both automotive and industrial environments.