BUK78150-55A,135

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)

SKU:4c46760f5302 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SC-73
Package / Case：TO-261-4, TO-261AA

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BUK78150-55A,135

Overview

The BUK78150-55A is an N-channel TrenchMOS standard level FET designed for automotive and general-purpose power switching. It features a drain-source voltage of 55 V, continuous drain current of 5.5 A at 25 °C, and total power dissipation of 8 W. The device exhibits low on-state resistance, with maximum values of 150 mΩ at 25 °C and 278 mΩ at 150 °C (VGS = 10 V, ID = 5 A). Gate-source threshold voltage ranges from 2 V to 4 V at 25 °C. It operates within a junction temperature range of -55 °C to 150 °C and complies with the AEC-Q101 standard.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for standard level gate drive sources

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and tape/reel specifications. Confirm that the component status remains active or qualified for new designs before finalizing procurement plans. Cross-reference the requested part number with the latest Nexperia product data sheet to validate all electrical parameters and thermal characteristics match the intended application requirements.

Selection Notes

Select this component for circuits requiring robust N-channel switching with standard logic-level gate drive compatibility. Ensure the design accommodates the specified thermal resistance from junction to solder point and ambient conditions. Verify that peak drain currents and avalanche energy limits are not exceeded during transient operations to maintain reliability in automotive environments.

Part Context

This device belongs to the BUK78150 series of N-channel enhancement mode Field-Effect Transistors manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to achieve high performance in a plastic surface-mounted SOT223 package. The series is specifically engineered to meet automotive quality standards while providing efficient power switching capabilities for various load types.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings without reviewing pin configurations and thermal characteristics.