BUK7880-55,135

$0.25

Description：MOSFET N-CH 55V 3.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:79ea96d24541 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 3.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SC-73
Package / Case：TO-261-4, TO-261AA

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BUK7880-55,135

Overview

The BUK7880-55 is an N-channel TrenchMOS standard level FET in a SOT223 package. It features a drain-source voltage of 55 V and a continuous drain current of 7.5 A at 25 °C. The on-state resistance is 65 mΩ typ (80 mΩ max) at VGS = 10 V and ID = 5 A. Total power dissipation is 8.3 W. It includes integrated protection diodes for electrostatic robustness and is qualified to AEC-Q101 standards.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Electrostatically robust due to integrated protection diodes
Low conduction losses due to low on-state resistance

Applications

Automotive power switching
General purpose power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation, as variations such as /CU may exist. Confirm that the component status remains in production rather than development or qualification phases. Ensure the requested package version matches the SC-73 plastic surface-mounted specification with increased heatsink capabilities.

Selection Notes

Select this component for circuits requiring a 55 V N-channel enhancement mode MOSFET. The device supports up to 7.5 A continuous drain current at 25 °C case temperature. Consider the thermal resistance from junction to solder point when designing heat dissipation strategies for high-current applications.

Part Context

This part belongs to the Nexperia BUK7880 series of N-channel TrenchMOS standard level FETs. These devices utilize TrenchMOS technology to achieve low on-state resistance within a compact SOT223 package. The series is designed for robust performance in both automotive and general-purpose switching environments.