BUK7880-55A/CUX

$0.50

Description：MOSFET N-CH 55V 7A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5f8947a0cdcf Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 7A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK7880-55A/CUX

Overview

The BUK7880-55A/CUX is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a 55 V drain-source voltage and supports a continuous drain current of 7 A at 25 °C solder point temperature. The device exhibits a typical on-state resistance of 68 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 8 W at 25 °C. It includes avalanche ruggedness with a non-repetitive energy rating of 53 mJ. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Utilizes Nexperia General Purpose Automotive TrenchMOS technology
Optimized for low conduction losses via reduced on-state resistance
Compatible with standard level gate drive sources

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and marking code accuracy. Confirm that the component meets the required AEC-Q101 qualification status for the intended automotive application environment. Ensure design parameters remain within the absolute maximum ratings defined in the product data sheet to prevent irreversible damage.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with low conduction losses in automotive environments. The standard level gate drive compatibility simplifies driver selection. Evaluate thermal management requirements based on the 15 K/W junction-to-solder-point thermal resistance. Consider the 53 mJ avalanche energy capability for inductive load protection scenarios.

Part Context

This part belongs to the BUK7880 series of N-channel enhancement mode Field-Effect Transistors manufactured by Nexperia USA Inc. It utilizes plastic surface-mounted packaging (SOT223) with increased heatsink capabilities. The series is engineered using TrenchMOS technology to provide high performance in general-purpose automotive applications while maintaining compliance with industry reliability standards.