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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3140 pF @ 25 V
- FET Feature：Current Sensing
- Power Dissipation (Max)：221W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-5
- Package / Case：TO-220-5
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Overview
The BUK7908-40AIE is an N-channel TrenchPLUS standard level FET utilizing TrenchMOS technology. It features a 40 V drain-source voltage rating and a typical on-state resistance of 68 mΩ at 25 °C. The device supports a continuous drain current of 117 A at 25 °C mounting base temperature, with a peak pulsed current capability of 468 A. Total power dissipation reaches 221 W under specified conditions. Integrated ESD protection diodes enhance electrostatic robustness. The component includes a dedicated sense pin for current monitoring, offering a typical ID/Isense ratio of 500.
Feature Summary
- Integrated current sensing capability reduces external component count
- Built-in ElectroStatic Discharge (ESD) protection diodes ensure high electrostatic robustness
- Low on-state resistance minimizes conduction losses
- Qualified to AEC standards for automotive critical applications
Applications
- Electrical Power Assisted Steering (EPAS)
- Variable Valve Timing systems for engines
Procurement Notes
Verify the specific ordering suffix '127' against the manufacturer's official documentation to confirm packaging details. Confirm the current product status as active or obsolete before design finalization. Ensure the TO-220 plastic package variant matches the thermal requirements of the target application. Cross-reference the datasheet revision date to validate all electrical parameters.
Selection Notes
Select this component for designs requiring integrated current sensing within a single N-channel MOSFET package. The low on-state resistance makes it suitable for high-current switching applications. Verify that the gate drive source is compatible with the standard level gate threshold requirements. Ensure the thermal management solution can handle the specified total power dissipation limits.
Part Context
This part belongs to the Nexperia BUK7908 series of N-channel enhancement mode Field-Effect Transistors. It utilizes TrenchMOS technology to achieve low on-state resistance. The device is designed for automotive environments, meeting relevant qualification standards. The TO-220 package provides a heatsink-mounted configuration with a single mounting hole for effective thermal dissipation.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Generic replacements may lack the integrated current sensing feature or specific automotive qualifications.
