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Product Detailed Parameters
- Description：MOSFET N-CH 40V D2PAK-7
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
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Overview
The BUK7C1R2-40EJ is an N-channel MOSFET manufactured by NXP USA Inc. It features a Drain-to-Source Voltage (Vdss) of 40V and supports a continuous Drain Current (Id) of 200A. The component utilizes Metal Oxide Semiconductor technology and is housed in a D2PAK-7 package case. This single FET is designed for surface mount applications requiring efficient switching capabilities within the specified voltage and current limits.
Feature Summary
- N-channel MOSFET configuration for unidirectional current control
- High current handling capability suitable for power switching applications
- Surface mount D2PAK-7 package design for PCB integration
Applications
- Power management circuits
- DC-DC converter stages
- Motor control interfaces
Procurement Notes
Verify part authenticity through authorized NXP distributors or certified suppliers. Confirm RoHS compliance status and manufacturing date codes upon receipt. Ensure storage conditions meet semiconductor specifications to prevent moisture damage. Cross-reference datasheet revisions to confirm pinout and electrical characteristics match system requirements before integration.
Selection Notes
Select this component when a 40V rating and high current capacity are required for N-channel switching. Evaluate thermal resistance parameters against heat sink availability. Compare on-resistance values with alternative packages if space constraints exist. Ensure gate drive voltage compatibility with the specific logic levels used in the target circuit design.
Part Context
This device belongs to the BUK7C series of automotive-grade and industrial MOSFETs from NXP. The series emphasizes low on-resistance and robust packaging for demanding environments. The D2PAK-7 variant offers enhanced thermal performance compared to standard TO-263 packages, supporting higher power dissipation in compact form factors.
Replacement Considerations
Check for direct cross-references from other manufacturers offering identical 40V, 200A N-channel specifications in D2PAK-7 packages. Verify pin compatibility and thermal pad configurations before substitution. Review updated datasheets for any changes in maximum ratings or switching times that might affect existing circuit designs.
