BUK7C5R4-100EJ

BUK7C5R4-100EJ

  • Description:MOSFET N-CH 100V D2PAK-7
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)

SKU:5e8dc3e536b5 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 100V D2PAK-7
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK-7
  • Package / Case:TO-263-7, D2PAK (6 Leads + Tab)

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BUK7C5R4-100EJ

Overview

The BUK7C5R4-100EJ is an N-channel Power MOSFET manufactured by NXP Semiconductors. It features a 100 V drain-source voltage rating and supports a continuous drain current of 147 A. The device is housed in a D2PAK-7 (TO-263-7) surface-mount package, which includes six leads plus a tab for thermal management. This component is designed for high-efficiency power switching applications requiring low on-state resistance and robust thermal performance.

Feature Summary

  • N-channel enhancement mode MOSFET structure
  • Surface mount D2PAK-7 package with exposed tab
  • High current handling capability up to 147 A
  • 100 V breakdown voltage rating

Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power supply output stages

Procurement Notes

Verify the manufacturer marking and date code on the physical component to ensure authenticity from NXP Semiconductors. Confirm that the D2PAK-7 package dimensions match your PCB footprint requirements. Check RoHS compliance status if environmental regulations apply to your specific manufacturing process or end-use region.

Selection Notes

Select this component when a 100 V rating and high continuous current capacity are required in a surface-mount form factor. Ensure the thermal design accounts for the D2PAK-7 package's heat dissipation characteristics. Compare on-resistance values against alternative devices to optimize efficiency for the specific load conditions of the target application circuit.

Part Context

This part belongs to the BUK7C series of N-channel MOSFETs from NXP. These components are engineered for general-purpose power switching tasks. The D2PAK-7 package provides a balance between electrical performance and ease of automated assembly compared to through-hole alternatives.

FAQ

What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage (V_DSS) is 100 V.

Does the BUK7C5R4-100EJ use a standard TO-220 package?

No, it uses a D2PAK-7 (TO-263-7) surface-mount package.

BUK7C5R4-100EJBUK7C5R4-100EJ

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