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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5.5A/14A 6DFN
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：453 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The BUK7D36-60EX is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless thermal enhanced ultra-thin small outline package with side-wettable flanks. The device supports a drain-source voltage of 60 V and a continuous drain current of 14 A at a solder point temperature of 25 °C. The maximum on-state resistance is 36 mΩ at VGS = 10 V and ID = 5.5 A. Total power dissipation reaches 15 W at Tsp = 25 °C. The component operates within a junction temperature range of -55 °C to +175 °C and is qualified to the AEC-Q101 standard.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Trench MOSFET technology enabling very fast switching
- Extended temperature range supporting operation up to 175 °C
- Side wettable flanks facilitating optical solder inspection
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration, such as reel or cut tape specifications. Confirm that the requested part number matches the DFN2020MD-6 package variant. Ensure compliance with the stated absolute maximum ratings during design integration to prevent permanent damage from exceeding stress limits.
Selection Notes
Select this component when a compact surface-mount solution with high thermal efficiency is required. The DFN2020MD-6 package offers low thermal resistance suitable for thermally demanding environments. Consider the 60 V rating and 14 A current capability for low-voltage power switching tasks. Verify gate drive requirements align with the specified threshold voltage characteristics for optimal performance.
Part Context
This device belongs to Nexperia's portfolio of N-channel Trench MOSFETs designed for medium power applications. The product utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a highly integrated, space-saving footprint. It is engineered to meet rigorous automotive reliability standards while maintaining compatibility with standard surface-mount assembly processes.
Replacement Considerations
Consult the official Nexperia datasheet for direct cross-reference information. Verify pinout compatibility and thermal characteristics before substituting with other DFN packages. Ensure any alternative component meets the same AEC-Q101 qualification level if used in automotive contexts.
