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Product Detailed Parameters
- Description：MOSFET N-CH 60V 58A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：22.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E13-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology in an I2PAK (SOT226) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 58 A at 25 °C mounting base temperature, and total power dissipation of 96 W. The device features a typical on-state resistance of 9.6 mΩ at 10 V gate drive and 15 A drain current. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments with 175 °C rating
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component status remains active and available through authorized Nexperia distributors. Check for any recent product change notices or longevity program updates that may affect long-term supply availability for production designs.
Selection Notes
Select this component for applications requiring a single N-channel MOSFET with high current handling in an I2PAK package. Ensure the thermal management design accounts for the 1.56 K/W junction-to-mounting-base thermal resistance. Verify that the gate drive voltage aligns with the standard level gate requirements for optimal RDS(on) performance at elevated temperatures.
Part Context
This part belongs to the Nexperia BUK7E series of N-channel TrenchMOS standard level FETs. These devices are specifically engineered for automotive electronics, offering a balance of low on-resistance and rugged avalanche capability. The SOT226 package provides efficient heat dissipation for surface-mount assembly, making it suitable for power switching tasks in constrained automotive environments.
Replacement Considerations
Direct replacements within the same family include BUK7E4R6-60E and BUK7E2R6-60E. Verify pinout compatibility and thermal characteristics when substituting. Ensure the alternative part meets the same AEC-Q101 qualification standards required for the target automotive application.
