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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：154 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11.96 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E1R6-30E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a maximum total power dissipation of 349 W under the same conditions. Static characteristics specify a typical drain-source on-state resistance of 1.25 mΩ at VGS = 10 V and ID = 25 A. Dynamic performance includes a gate-drain charge of 49.8 nC.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments with a 175 °C junction temperature rating
- True standard level gate with VGS(th) greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or direct manufacturer channels. Confirm that the received part matches the marking code BUK7E1R6-30E and corresponds to the SOT226 package outline. Ensure compliance with RoHS directives and check for any relevant Product Change Notifications (PCN) affecting manufacturing location or specifications prior to final design integration.
Selection Notes
Select this component for applications requiring high current handling up to 120 A and low on-state resistance in automotive environments. Consider the thermal resistance from junction to mounting base when designing heat dissipation solutions. Verify that the gate drive voltage supports the standard level threshold characteristics, particularly at elevated temperatures where VGS(th) remains above 1 V.
Part Context
This device belongs to the Nexperia TrenchMOS family of N-channel enhancement mode field-effect transistors. It is specifically engineered for power switching applications within the automotive sector, offering a balance of low conduction losses and high thermal stability. The I2PAK package provides a robust mechanical structure suitable for surface-mount assembly with a dedicated mounting base for efficient heat transfer.
Replacement Considerations
Consult official Nexperia documentation for qualified alternative part numbers within the BUK7 series. Ensure any substitute maintains compatibility with the SOT226 package dimensions and meets the same AEC-Q101 qualification requirements for automotive use.
