BUK7E1R8-40E,127

Overview

The BUK7E1R8-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications and qualified to AEC Q101 standards, it features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.8 mΩ at 25 °C and supports junction temperatures up to 175 °C.

Feature Summary

• AEC Q101 compliant for automotive reliability
• Repetitive avalanche rated for robustness
• Suitable for thermally demanding environments with 175 °C rating
• True standard level gate with threshold voltage greater than 1V at 175 °C

Applications

• 12 V Automotive systems
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC Q101 qualification status for your intended automotive application. Cross-reference the latest datasheet revision to validate thermal characteristics and absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component when a low on-state resistance is critical for minimizing conduction losses in high-current switching applications. The I2PAK package provides a large mounting base area, facilitating efficient heat dissipation for power densities up to 349 W. Ensure the gate drive circuitry can accommodate the total gate charge requirements while maintaining the specified standard level gate threshold performance across the operating temperature range.

Part Context

This part belongs to Nexperia's BUK7E series of N-channel TrenchMOS standard level FETs. It is specifically engineered for automotive environments requiring high ruggedness and thermal stability. The I2PAK (SOT226) package distinguishes it from surface-mount variants like LFPAK or TO-263, offering a distinct mechanical footprint optimized for direct mounting to heatsinks via the exposed drain pad.

Replacement Considerations

Direct replacements must match the 40 V rating, 120 A current capacity, and SOT226 package outline. Verify that any substitute maintains AEC Q101 compliance and comparable RDS(on) values. Check pinout compatibility, specifically ensuring the mounting base connection aligns with the drain terminal as defined in the original datasheet.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 1021 mJ under conditions of ID = 120 A, Vsup ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.

How does the gate-source threshold voltage behave at high temperatures?

The device features a true standard level gate with a VGS(th) rating of greater than 1 V at a junction temperature of 175 °C, ensuring reliable turn-on characteristics in thermally demanding environments.

What is the internal drain inductance value?

The internal drain inductance (LD) is typically 2.5 nH, measured from the upper edge of the drain mounting base to the center of the die.