BUK7E2R3-40C,127

$1.01

Description：MOSFET N-CH 40V 100A I2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Tube

SKU:b9073589bd3b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A I2PAK
Series：*
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK7E2R3-40C,127

Overview

The BUK7E2R3-40C is a standard level gate drive N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. It features a 40 V drain-source voltage rating and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 2.3 mΩ at 25 °C and supports a total power dissipation of 333 W under the same conditions. Designed for thermally demanding environments, it operates up to a junction temperature of 175 °C and includes avalanche ruggedness with a non-repetitive avalanche energy capability of 1.2 J.

Feature Summary

AEC-Q101 compliant for high performance automotive applications
Avalanche robust construction suitable for demanding environments
Standard level gate drive compatibility
Suitable for thermally demanding environments up to 175°C rating

Applications

12V Motor, lamp and solenoid loads
High performance automotive power systems
High performance Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure package and tape/reel specifications match design requirements. Confirm that the component status remains active or qualified for long-term supply through official Nexperia channels before finalizing procurement plans.

Selection Notes

Select this component for designs requiring standard level gate drive compatibility and high current handling in automotive contexts. Ensure thermal management strategies account for the 333 W power dissipation limit and verify that gate drive voltages align with the standard level threshold characteristics for optimal switching performance.

Part Context

This part belongs to the Nexperia BUK7E series of N-channel TrenchMOS standard level FETs. Manufactured using advanced TrenchMOS technology, these devices are specifically engineered for high-performance automotive applications requiring robust electrical characteristics and compliance with automotive qualification standards.