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Product Detailed Parameters
- Description：NEXPERIA BUK7E2R3-40E - 120A, 40
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：109.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：293W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E2R3-40E,127 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a DPAK (SOT-669) surface-mount package. The device is rated for a drain-source voltage of 40V and supports a continuous drain current of 85A at case temperature. Key electrical parameters include a maximum on-resistance of 2.3mΩ at 10V gate drive and a power dissipation capacity of 125W under specified thermal conditions.
Feature Summary
- Utilizes advanced TrenchMOS technology to achieve low on-resistance and high switching efficiency.
- Qualified to AEC-Q101 standards for reliability in demanding automotive environments.
- Features a standard level gate threshold voltage suitable for direct logic interface.
- Designed with robust avalanche characteristics for use in inductive load applications.
Applications
- Automotive motor control systems
- Start-stop micro-hybrid power management
- Transmission control units
- General purpose power switching
Procurement Notes
Verify the specific ordering code suffix against the manufacturer's official datasheet to confirm package type and reel specifications. Ensure compliance with RoHS directives and check for any relevant REACH substance declarations prior to integration into production designs.
Selection Notes
Select this component for circuits requiring high current handling within a compact footprint. Evaluate thermal resistance values relative to the PCB copper area to ensure junction temperatures remain within safe operating limits during continuous operation.
Part Context
This part belongs to the BUK7E series of standard level N-channel MOSFETs from Nexperia. These devices are engineered for cost-effective performance in automotive and industrial sectors, offering a balance between conduction losses and switching speeds.
Replacement Considerations
Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without confirming pinout compatibility and absolute maximum ratings match the original design requirements.
