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Product Detailed Parameters
- Description：PFET, 75A I(D), 30V, 0.0027OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：91 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6.212 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E2R7-30B is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 75 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 2.7 mΩ at 25 °C and supports a total power dissipation of 300 W. It features a non-repetitive avalanche energy rating of 2.3 J and operates with junction temperatures up to 175 °C.
Feature Summary
- Low conduction losses resulting from low on-state resistance
- Compliance with AEC-Q101 standards for automotive reliability
- Compatibility with standard level gate drive sources
- Suitability for thermally demanding environments due to high temperature rating
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest documentation before procurement. Confirm that the component status aligns with current production schedules, as product lifecycles may change. Ensure compatibility with existing thermal management designs given the package limitations on continuous current. Cross-reference pin assignments to prevent installation errors during assembly.
Selection Notes
Select this component for circuits requiring robust performance in automotive environments with standard logic-level gate drivers. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the intended power dissipation levels. Consider the avalanche ruggedness when designing for inductive load switching scenarios. Verify that the package dimensions fit within the available PCB real estate constraints.
Part Context
This N-channel MOSFET belongs to the TrenchMOS family, engineered for high-performance switching. It integrates advanced trench gate technology to minimize resistive losses while maintaining high breakdown voltage capabilities. The device is specifically qualified for automotive use, ensuring reliability under strict environmental and operational stress conditions defined by industry standards.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package type or nominal voltage ratings. Verify that any alternative component matches the specific on-resistance, gate charge, and thermal characteristics required for the application.
