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Product Detailed Parameters
- Description：NEXPERIA BUK7E3R1-40E - 100A, 40
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：79 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E3R1-40E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets the AEC-Q101 qualification standard. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 3.1 mΩ at 25 °C and supports a total power dissipation of 234 W under specified thermal conditions.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Rated for repetitive avalanche operation
- Operates effectively in thermally demanding environments up to 175 °C
- Features true standard level gate characteristics with threshold voltage exceeding 1 V at elevated temperatures
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Ensure that the component version matches the required production status and that all environmental compliance data aligns with project specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel switching capabilities within a 40 V system. Consider the low on-state resistance and high current handling capacity when evaluating thermal management requirements and efficiency targets for power distribution or motor control circuits.
Part Context
This part belongs to the Nexperia BUK7E series of TrenchMOS standard level FETs. It is specifically engineered for automotive environments, offering enhanced ruggedness through repetitive avalanche rating and high-temperature stability. The SOT226 package provides efficient thermal dissipation suitable for high-power density applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical limits carefully when considering equivalent devices from other manufacturers.
