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Product Detailed Parameters
- Description：MOSFET N-CH 60V 120A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：293W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E3R5-60E,127 is a standard level N-channel MOSFET utilizing TrenchMOS technology within an I2PAK (SOT226) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.5 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 293 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- AEC Q101 compliant for high performance automotive applications
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments with 175 °C rating
- True standard level gate with threshold voltage greater than 1V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring high current handling in automotive or industrial settings. The I2PAK package provides effective thermal management for power dissipation needs. Ensure gate drive circuits accommodate the standard level gate requirements and total gate charge specifications for optimal switching performance.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs. It is designed specifically for automotive applications meeting AEC-Q101 standards. The I2PAK (SOT226) package offers a balance between high current capacity and thermal efficiency, distinguishing it from smaller surface-mount alternatives.
Replacement Considerations
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative devices meet the same AEC-Q101 qualification and avalanche ruggedness requirements. Ensure the replacement package matches the I2PAK footprint for proper mounting.
