BUK7E4R0-80E,127

$1.40

Description：MOSFET N-CH 80V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:3be5906058ae Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：169 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12.03 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK7E4R0-80E,127

Overview

The BUK7E4R0-80E,127 is an N-channel TrenchMOS standard level MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a SOT226 package. The device is designed and qualified to the AEC-Q101 standard for high-performance automotive applications. Key electrical parameters include a drain-source voltage (Vds) of 80 V, a continuous drain current (Id) of 39 A at 10 C, and a maximum gate-source voltage (Vgs) of ±20 V. The on-state resistance (Rds(on)) is specified as a maximum of 4.0 mΩ at a gate-source voltage of 10 V and a drain current of 39 A. The component supports a junction temperature up to 175 °C.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive reliability.
Rated for repetitive avalanche energy operation.
Capable of operating in thermally demanding environments with a 175 °C rating.
Features true standard level gate characteristics with a threshold voltage greater than 1 V at 175 °C.

Applications

12 V, 24 V, and 48 V automotive systems
Electric and electro-hydraulic power steering
Motors, lamps, and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring robust automotive-grade performance under high thermal stress. The low on-resistance supports efficient power switching in motor and solenoid drivers. Ensure the gate drive circuitry accommodates the standard level gate threshold requirements. Confirm that the PCB layout supports the thermal dissipation needs of the SOT226 package for sustained operation at elevated temperatures.

Part Context

This part belongs to Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. The manufacturer focuses on the automotive, industrial, computing, consumer, and wearable application markets. The product line leverages advanced trench technology to deliver high power density and reliability for modern electronic systems.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers within the same family or equivalent specifications. Cross-reference pinouts and thermal characteristics when evaluating alternatives.