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Product Detailed Parameters
- Description：NEXPERIA BUK7E4 - TRANSISTOR >30
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6230 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E4R6-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets the AEC-Q101 qualification standard. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device features a maximum on-state resistance of 4.6 mΩ at 25 °C and supports junction temperatures up to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Repetitive avalanche rated for robustness
- Suitable for thermally demanding environments with a 175 °C rating
- True standard level gate operation with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Ensure that the component status aligns with current production requirements, as datasheet statuses may change from preliminary to product data sheets. Confirm compliance with relevant environmental directives such as RoHS and REACH through the latest official product information.
Selection Notes
Select this component for designs requiring high current handling in a surface-mount configuration suitable for automotive thermal profiles. The low on-state resistance minimizes conduction losses, while the avalanche rating provides protection against inductive load switching events. Verify that the gate drive circuitry accommodates the standard level gate threshold characteristics across the full operating temperature range.
Part Context
This part belongs to Nexperia's TrenchMOS family of standard level N-channel MOSFETs. It is specifically engineered for automotive electronics, distinguishing itself through AEC-Q101 qualification. The I2PAK package offers a balance between high current capability and PCB space efficiency compared to traditional through-hole packages.
Replacement Considerations
Consult official Nexperia substitution guides or cross-reference tools for verified alternatives. Do not assume pinout compatibility or electrical equivalence with other SOT226 devices without explicit manufacturer confirmation.
