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Product Detailed Parameters
- Description：BUK7J1R0-40H/SOT1023/4 LEADS
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：+20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BUK7J1R0-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology, housed in an LFPAK56E (SOT1023) package. It features a drain-source voltage of 40 V and a continuous drain current of 220 A at 25 °C mounting base temperature. The typical on-state resistance is 1 mΩ at 25 °C, rising to 2.18 mΩ at 175 °C. Total power dissipation reaches 500 W at 25 °C. Gate-source voltage limits are ±20 V, with a threshold voltage range of 1 V to 3.6 V. Junction temperature spans -55 °C to 175 °C.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards for high performance and endurance.
- Trench 9 Superjunction technology provides enhanced power density and improved safe operating area compared to standard TrenchMOS.
- LFPAK Gull Wing leads absorb mechanical stress during thermal cycling and allow visual soldering inspection without x-ray equipment.
- LFPAK copper clip technology reduces thermal resistance and increases maximum current capability.
Applications
- 12 V automotive systems
- Start-Stop micro-hybrid applications
- Transmission control
- Motors, lamps and solenoid control
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm RoHS compliance status and REACH SVHC substance declarations prior to integration. Ensure the component meets the required AEC-Q101 qualification level for the intended automotive application environment.
Selection Notes
Select this component for designs requiring low conduction losses and high current handling in thermally demanding environments. The tight gate-source threshold voltage limits facilitate easy paralleling of multiple MOSFETs. Consider the LFPAK56E package for its superior board-level reliability and reduced thermal resistance compared to traditional QFN packages.
Part Context
This device belongs to Nexperia's BUK7 series of automotive-grade N-channel MOSFETs. It utilizes High-Performance Automotive TrenchMOS technology to deliver low ohmic characteristics within a compact surface-mount footprint. The product is designed specifically for critical automotive applications requiring robustness and high efficiency under varying thermal conditions.
Replacement Considerations
BUK7Y1R4-40HX
FAQ
What technology enables the low on-state resistance in this MOSFET?
The device uses Trench 9 Superjunction technology, which reduces cell pitch to enhance power density and efficiency while lowering RDSon within the same footprint.
How does the LFPAK package improve reliability compared to QFN?
The LFPAK Gull Wing leads absorb mechanical stress during thermal cycling, offering higher board-level reliability than traditional QFN packages, and allow for visual AOI soldering inspection.
