BUK7J1R4-40HX

Overview

The Nexperia BUK7J1R4-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within an enhanced LFPAK56E (SOT1023) package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 190 A at a mounting base temperature of 25 °C. The device exhibits a typical drain-source on-state resistance of 1.06 mΩ at VGS = 10 V and ID = 25 A, with a total power dissipation capacity of 395 W. Thermal resistance from junction to mounting base is typically 0.29 K/W.

Feature Summary

• Fully automotive qualified to AEC-Q101 standards with a 175 °C operating rating for thermally demanding environments.
• Trench 9 Superjunction technology provides reduced cell pitch for enhanced power density, lower RDSon, and improved SOA compared to standard TrenchMOS.
• LFPAK Gull Wing leads offer high board level reliability by absorbing mechanical stress during thermal cycling and enable visual AOI soldering inspection.
• LFPAK copper clip technology improves reliability by reducing thermal resistance and RDSon while increasing maximum current capability.

Applications

• 12 V automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'X' corresponds to the reel packaging configuration as defined in the official Nexperia ordering information table. Confirm that the component meets the required AEC-Q101 qualification status for your specific automotive application environment. Ensure the LFPAK56E footprint matches your PCB design guidelines for reflow soldering.

Selection Notes

Select this component when high current handling up to 190 A and low conduction losses are critical for 40 V automotive circuits. The tight VGS(th) limits facilitate easy paralleling of multiple devices for higher current sharing. Consider the LFPAK56E package for its superior thermal performance and mechanical robustness compared to traditional QFN packages in high-power density designs.

Part Context

This part belongs to the BUK7J series of N-channel MOSFETs from Nexperia, designed specifically for automotive applications. It utilizes the SOT1023 (LFPAK56E) plastic surface-mounted package variant. The product is manufactured using silicon technology and is intended for use in high-performance power switching environments requiring high reliability and endurance.

Replacement Considerations

Direct substitutes include other Nexperia BUK7J series parts with similar voltage and current ratings, such as BUK7J1R0-40H, provided the pinout and thermal characteristics match the design requirements. Verify compatibility with existing PCB footprints and thermal management solutions before substitution.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 154 mJ under conditions of ID = 190 A, Vsup ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.

How does the LFPAK Gull Wing lead design benefit reliability?

The Gull Wing leads provide high board level reliability by absorbing mechanical stress during thermal cycling, which is an advantage over traditional QFN packages that may be more susceptible to stress-induced failures.

Is this MOSFET suitable for paralleling applications?

Yes, the device features tight VGS(th) limits, which enable easy paralleling of MOSFETs to share current effectively in high-power applications.