BUK7K12-60EX

BUK7K12-60EX

$1.40
  • Description:MOSFET 2N-CH 60V 40A LFPAK56D
  • Series:-

SKU:8e61e884e71c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 40A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:40A
  • Rds On (Max) @ Id, Vgs:9.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:34.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2348pF @ 25V
  • Power - Max:68W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q100

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BUK7K12-60EX

Overview

The Nexperia BUK7K12-60EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 9.3 mΩ at VGS = 10 V and ID = 10 A, rising to 20.8 mΩ at 175 °C. Total power dissipation reaches 68 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration in a single surface-mounted package
  • Qualified to AEC-Q101 automotive standards for high performance applications
  • Repetitive avalanche rated for robust operation under transient conditions
  • True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the LFPAK56D (SOT1205) package outline and pinning configuration defined in the datasheet before integration into the design.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. The 175 °C thermal rating makes it suitable for thermally demanding environments. Verify that the gate drive circuitry can support the standard level threshold requirements, particularly at elevated operating temperatures where the threshold remains above 1 V.

Part Context

This part belongs to Nexperia's BUK7 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low on-resistance within the LFPAK56D package. The product is designed specifically for high-performance automotive applications, distinguishing it from general-purpose industrial transistors through its rigorous qualification standards.

Replacement Considerations

Direct replacements must match the LFPAK56D (SOT1205) package and dual N-channel configuration. Verify that substitute parts meet the 60 V drain-source voltage, 40 A continuous current, and 9.3 mΩ maximum on-resistance specifications. Ensure the replacement also holds AEC-Q101 qualification if automotive reliability is required.

BUK7K12-60EXBUK7K12-60EX
$1.40
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