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The Nexperia BUK7K12-60EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 9.3 mΩ at VGS = 10 V and ID = 10 A, rising to 20.8 mΩ at 175 °C. Total power dissipation reaches 68 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the LFPAK56D (SOT1205) package outline and pinning configuration defined in the datasheet before integration into the design.
Select this component for designs requiring dual N-channel isolation within a compact footprint. The 175 °C thermal rating makes it suitable for thermally demanding environments. Verify that the gate drive circuitry can support the standard level threshold requirements, particularly at elevated operating temperatures where the threshold remains above 1 V.
This part belongs to Nexperia's BUK7 series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low on-resistance within the LFPAK56D package. The product is designed specifically for high-performance automotive applications, distinguishing it from general-purpose industrial transistors through its rigorous qualification standards.
Direct replacements must match the LFPAK56D (SOT1205) package and dual N-channel configuration. Verify that substitute parts meet the 60 V drain-source voltage, 40 A continuous current, and 9.3 mΩ maximum on-resistance specifications. Ensure the replacement also holds AEC-Q101 qualification if automotive reliability is required.