ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 40A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：40A
- Rds On (Max) @ Id, Vgs：10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：30.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2163pF @ 25V
- Power - Max：64W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q100
Download product information
Overview
The Nexperia BUK7K13-60EX is a dual N-channel enhancement-mode MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 10 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 64 W under specified conditions, with a junction temperature range spanning from -55 °C to +175 °C. Key dynamic parameters include a total gate charge of 30.1 nC and a repetitive avalanche rating.
Feature Summary
- Dual MOSFET configuration in a single LFPAK56D package
- Qualified to AEC-Q101 automotive standards
- Repetitive avalanche rated for rugged operation
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against the official datasheet to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the ordering code matches the required quantity per reel. Confirm RoHS compliance status and REACH SVHC declarations prior to final procurement decisions.
Selection Notes
Select this component for designs requiring dual N-channel isolation within a compact footprint. The low thermal resistance facilitates efficient heat dissipation in thermally demanding environments. Verify that the gate drive voltage supports the standard level gate requirements for optimal RDS(on) performance across the operating temperature range.
Part Context
This part belongs to the BUK7K series of dual N-channel MOSFETs from Nexperia. These devices are engineered using TrenchMOS technology to provide high current density and low on-resistance. The LFPAK56D package offers superior thermal performance compared to traditional plastic packages, making it suitable for automotive and industrial applications where space and heat management are critical constraints.
Replacement Considerations
BUK7K12-60EX
FAQ
What is the maximum junction temperature for the BUK7K13-60EX?
The maximum junction temperature is 175 °C.
Is the BUK7K13-60EX qualified for automotive applications?
Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.
What is the typical total gate charge (QG) for this device?
The typical total gate charge is 30.1 nC.
