BUK7K15-80EX

Overview

The Nexperia BUK7K15-80EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. Designed for high-performance automotive applications, it meets the AEC-Q101 qualification standard. The device features a drain-source voltage of 80 V and supports a continuous drain current of 23 A at 25 °C mounting base temperature. It exhibits a maximum on-state resistance of 15 mΩ at 10 V gate drive and 10 A drain current. Total power dissipation reaches 68 W under specified thermal conditions, with junction and storage temperatures ranging from -55 °C to +175 °C.

Feature Summary

• Dual MOSFET configuration in a single LFPAK56D surface-mounted package
• Qualified to AEC-Q101 automotive standards for high reliability
• Repetitive avalanche rated for robust operation in demanding environments
• True standard level gate ensuring compatibility with typical logic drivers

Applications

• 12 V, 24 V and 48 V automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '71580E' with physical samples to authenticate the source and prevent counterfeit procurement risks during sourcing.

Selection Notes

Select this component when a dual N-channel solution is required for automotive power management circuits operating up to 80 V. The LFPAK56D package offers superior thermal performance compared to traditional SO-8 packages, supporting higher current densities. Verify that the gate threshold voltage characteristics align with the driving circuit capabilities, particularly at elevated junction temperatures up to 175 °C.

Part Context

This device belongs to the Nexperia BUK7K series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to achieve low on-state resistance while maintaining high switching speeds. The product is specifically engineered to meet the rigorous environmental and electrical requirements of modern vehicle electronics, providing a compact footprint for space-constrained designs.

Replacement Considerations

Direct replacements must match the LFPAK56D (SOT1205) package and AEC-Q101 qualification. Verify that substitute parts maintain equivalent VDS, ID, and RDS(on) specifications. Check pinout compatibility, as the LFPAK56D has specific drain and source terminal arrangements that may differ from other dual MOSFET packages.

FAQ

What is the maximum junction temperature rating for the BUK7K15-80EX?

The maximum junction temperature (Tj) rating is 175 °C.

Is the BUK7K15-80EX qualified for automotive applications?

Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.

What is the gate-source threshold voltage at high temperatures?

The true standard level gate maintains a VGS(th) rating of greater than 1 V at 175 °C.