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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 30A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：30A
- Rds On (Max) @ Id, Vgs：14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：23.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1578pF @ 25V
- Power - Max：53W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BUK7K17-60EX is a dual N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 14 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 53 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Dual MOSFET configuration within a single surface-mounted package
- Qualified for high-performance automotive applications per AEC-Q101 standard
- Capable of withstanding thermally demanding environments due to elevated junction temperature rating
- Features true standard level gate operation maintaining threshold voltage above 1 V at maximum operating temperature
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging format and reel specifications. Confirm that the delivered components match the required AEC-Q101 qualification status for intended automotive deployment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Selection Notes
Select this component when designing circuits requiring dual N-channel isolation within a compact footprint. The low on-state resistance supports efficient power handling in 12 V automotive architectures. Evaluate the repetitive avalanche energy ratings if the application involves inductive load switching or potential transient voltage spikes exceeding normal operating limits.
Part Context
This part belongs to the BUK7K17 series of dual standard level MOSFETs manufactured by Nexperia USA Inc. The series employs TrenchMOS technology to achieve low conduction losses. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, facilitating reliable operation in space-constrained automotive electronic control units.
Replacement Considerations
BUK7K17-80EX
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum DC gate-source voltage rating is -20 V to +20 V.
Is the device rated for repetitive avalanche operation?
Yes, the datasheet specifies that the MOSFET is repetitive avalanche rated.
How does the threshold voltage behave at high temperatures?
The device maintains a true standard level gate with a VGS(th) greater than 1 V even at a junction temperature of 175 °C.
