BUK7K18-40EX

Overview

The BUK7K18-40EX is a dual N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 24.2 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 19 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation is rated at 38 W. It operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration with standard level gate characteristics
• Qualified to AEC-Q101 automotive standards for high performance applications
• Repetitive avalanche rated for robust operation
• Suitable for thermally demanding environments due to 175 °C rating

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the component against the official Nexperia datasheet BUK7K18-40E to confirm specifications match design requirements. Ensure the ordering suffix EX corresponds to the correct packaging format required for assembly. Cross-reference marking codes and pin configurations during incoming inspection to prevent integration errors.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact surface mount footprint. The low on-resistance supports efficient power handling in 12 V automotive architectures. Evaluate thermal management strategies to maintain junction temperatures within the specified operational limits under load conditions.

Part Context

This part belongs to the Nexperia BUK7 series of automotive-grade MOSFETs. It employs TrenchMOS technology to achieve low specific on-resistance within the LFPAK56D package. The device is designed specifically for high-reliability automotive electronics, offering enhanced ruggedness compared to standard industrial counterparts.

Replacement Considerations

BUK7K18-40E