BUK7K29-100EX

$2.01

Description：MOSFET 2N-CH 100V 29.5A LFPAK56D
Series：-

SKU:63987dcdb9c9 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 29.5A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：29.5A
Rds On (Max) @ Id, Vgs：24.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2436pF @ 25V
Power - Max：68W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q100

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BUK7K29-100EX

Overview

The BUK7K29-100EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 29.5 A at 25 °C. The typical on-state resistance is 19.5 mΩ, with a maximum of 24.5 mΩ at 10 V gate drive. Total power dissipation reaches 68 W. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Dual MOSFET configuration within a single surface-mounted package
Qualified for high performance automotive applications per AEC-Q101 standards
Capable of operating in thermally demanding environments with a 175 °C rating
Features true standard level gate drive characteristics

Applications

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against the official Nexperia ordering information table to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component marking code matches the datasheet reference '72910E'. Confirm that the application environment remains within the specified absolute maximum ratings to prevent permanent damage.

Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained designs. The LFPAK56D package offers improved thermal performance compared to traditional plastic packages. Verify that the gate drive voltage aligns with the standard level requirements to achieve the specified low on-state resistance values during operation.

Part Context

This part belongs to the Nexperia BUK7K series of automotive-grade MOSFETs. It utilizes TrenchMOS technology to deliver high current handling capabilities in a compact footprint. The dual channel design allows for independent control of two loads within a single eight-lead surface mount package, simplifying PCB layout for parallel or bridge configurations.