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The Nexperia BUK7K45-100EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 21.4 A at 25 °C mounting base temperature. The typical on-state resistance is 37.6 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 53 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH regulations, prior to integration into final designs. Cross-reference the datasheet revision date to ensure access to the most current electrical specifications and thermal characteristics.
Select this component for circuits requiring dual independent N-channel switching within a compact footprint. The low on-state resistance minimizes conduction losses in power paths. Ensure the application design accounts for the thermal resistance from junction to mounting base when calculating heat dissipation requirements. Verify that the gate drive voltage aligns with the standard level gate threshold specifications for optimal switching performance.
This part belongs to Nexperia's TrenchMOS family of standard level MOSFETs designed for robust automotive use. The LFPAK56D package provides efficient thermal transfer through a large exposed copper pad. The dual configuration allows for cost-effective implementation of bridge or half-bridge topologies without occupying additional board space compared to single discrete devices.
BUK7K45-100E