BUK7K5R6-30E,115

Overview

The BUK7K5R6-30E is a dual N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 30 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical on-state resistance is 5.6 mΩ at VGS = 10 V and ID = 20 A. Total gate charge is 29.7 nC, with input capacitance reaching 1969 pF. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration within a single surface-mounted package
• Qualified to AEC Q101 standard for automotive applications
• Repetitive avalanche rated for rugged operation
• Maintains true standard level gate threshold above 1 V at 175 °C

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring low conduction losses in dual-channel configurations. The LFPAK56D package provides efficient thermal dissipation suitable for high-power density layouts. Ensure gate drive voltages align with the standard level requirements to fully enhance both channels simultaneously.

Part Context

This part belongs to Nexperia's BUK7K series of TrenchMOS devices. These components are engineered for high-performance switching applications where compact footprint and robust thermal characteristics are critical. The series targets demanding environments, particularly within the automotive sector, offering reliability under varying thermal conditions.

Replacement Considerations

Direct substitutes include BUK7K5R6-30EX and BUK7K5R6-30E,115. Verify pinout compatibility and thermal resistance specifications when transitioning between packaging variants or manufacturer lot codes.