BUK7K6R2-40E/1X

Description：MOSFET 40V 40A LFPAK56D
Series：-

SKU:eb70d1dea658 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 40V 40A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：40A (Ta)
Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：32.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2210pF @ 25V
Power - Max：68W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK7K6R2-40E/1X

Overview

The BUK7K6R2-40E is a dual standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device has a maximum on-state resistance of 5.8 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 68 W at 25 °C. It operates within a junction temperature range of -55 °C to 175 °C and meets the AEC-Q101 qualification standard for automotive applications.

Feature Summary

Dual MOSFET configuration with Q101 compliance
Repetitive avalanche rated for rugged performance
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications or cut tape availability. Confirm that the component status remains active and check for any recent product change notifications regarding marking codes or assembly locations before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs with low on-state resistance and high thermal stability. Ensure the application environment supports the specified 175 °C junction temperature limit. Verify that the gate drive voltage aligns with the standard level gate requirements to achieve optimal conduction characteristics.

Part Context

This part belongs to Nexperia's BUK7K series of dual N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to deliver high efficiency and robust construction. The LFPAK56D package provides efficient thermal management, making it suitable for space-constrained automotive PCB layouts requiring high current handling capabilities.

Replacement Considerations

BUK7K6R2-40EX

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 157 mJ under conditions of ID = 40 A, Vsup ≤ 40 V, VGS = 10 V, and initial junction temperature of 25 °C.

How does the gate-source threshold voltage behave at high temperatures?

The gate-source threshold voltage remains greater than 1 V even at a junction temperature of 175 °C, ensuring reliable operation in thermally demanding environments.