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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 40A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：40A
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：32.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2210pF @ 25V
- Power - Max：68W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BUK7K6R2-40EX is a dual N-channel MOSFET from Nexperia, utilizing TrenchMOS technology within an LFPAK56D (SOT1205) surface-mount package. It features a 40 V drain-source voltage rating and supports a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 5.8 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 68 W under standard thermal conditions. Qualified to AEC-Q101 standards, it operates across a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Dual MOSFET configuration in a single compact package
- AEC-Q101 qualified for high-performance automotive applications
- Repetitive avalanche rated for robust operation
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the pinning diagram with your PCB layout to ensure compatibility with the LFPAK56D footprint. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values.
Selection Notes
Select this component when a dual N-channel configuration is required in a space-constrained automotive design. The low on-state resistance minimizes conduction losses in high-current paths. The wide operating temperature range makes it suitable for thermally demanding environments. Verify that the gate drive voltage aligns with the standard level gate requirements for optimal performance at elevated temperatures.
Part Context
This device belongs to Nexperia's BUK7K series of automotive-grade MOSFETs. It employs TrenchMOS technology to achieve low specific on-resistance. The LFPAK56D package provides efficient heat dissipation through a large exposed copper pad connected to the drains. This family is designed specifically for the rigorous reliability and environmental standards required in modern vehicle electronics.
Replacement Considerations
BUK7K6R8-40E
FAQ
What is the maximum junction temperature for this device?
The maximum junction temperature is 175 °C.
Is this component qualified for automotive use?
Yes, it is designed and qualified to the AEC-Q101 standard.
What technology is used in this MOSFET?
It uses TrenchMOS technology.
