BUK7K89-100EX

Overview

The BUK7K89-100EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 13 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 82.5 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 38 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration within a single surface-mounted package
• Qualified for high performance automotive applications per AEC Q101 standards
• Capable of withstanding thermally demanding environments with a 175 °C rating
• Features true standard level gate drive compatibility

Applications

• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the delivered components match the exact part number designation. Cross-reference the marking code '78910E' on the physical device to validate authenticity and traceability before integration into production assemblies.

Selection Notes

Select this component for designs requiring dual N-channel isolation in a compact footprint. The standard level gate threshold simplifies driver interface requirements compared to logic level alternatives. Ensure thermal management strategies account for the 3.96 K/W junction-to-mounting-base thermal resistance to maintain reliability under continuous load conditions.

Part Context

This device belongs to Nexperia's BUK7K series of automotive-grade power switches. It employs TrenchMOS technology to achieve low on-resistance within the LFPAK56D plastic package. The series is engineered specifically for robust operation in electrically noisy and thermally challenging automotive environments, meeting stringent qualification standards.

Replacement Considerations

BUK7K89-100E

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 19.5 mJ when ID is 13 A, Vsup is less than or equal to 100 V, RGS is 50 Ω, VGS is 10 V, and the initial junction temperature is 25 °C.

How does the gate-source threshold voltage vary with temperature?

At a junction temperature of 175 °C, the gate-source threshold voltage is guaranteed to be greater than 1 V at ID = 1 mA. At -55 °C, the maximum threshold voltage is 4.5 V.

What are the pin assignments for the LFPAK56D package?

Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Source 2, Pin 4 is Gate 2, Pins 5 and 6 are Drain 2, and Pins 7 and 8 are Drain 1.