BUK7L06-34ARC,127

Description：MOSFET N-CH 34V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:b08f3aaf89d8 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 34V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4533 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7L06-34ARC,127

Overview

The BUK7L06-34ARC is an N-channel enhancement mode field-effect power transistor utilizing Philips General-Purpose Automotive (GPA) TrenchMOS technology. It features a 34 V drain-source voltage rating and an internal gate resistor of 11 Ω. The device supports a continuous drain current up to 75 A at a mounting base temperature of 25 °C, with a peak pulsed current capability of 590 A. Typical on-state resistance is 5.1 mΩ at VGS = 10 V and ID = 30 A. Total power dissipation reaches 250 W at 25 °C, with a junction-to-mounting base thermal resistance of 0.33 K/W. It operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

Built-in ESD protection exceeding 8 kV human body model rating
Clamped avalanche ruggedness rated for 1.0 J non-repetitive energy
Integrated internal gate resistor for simplified driver interface
Qualified for automotive environments under AEC-Q101 standards

Applications

Automotive systems
General purpose power switching
Motor control circuits
Lamp drivers
Solenoid actuators

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official records before design finalization. Confirm that the TO-220 package variant matches the required mounting hole configuration. Ensure the sourcing channel provides traceability documentation consistent with original equipment manufacturer standards. Cross-reference the part number suffix to confirm the exact pinning and electrical specifications defined in the product data sheet.

Selection Notes

Select this component for applications requiring robust automotive-grade performance with high surge current handling. Evaluate the thermal management requirements based on the specified junction-to-mounting base thermal resistance. Consider the internal gate resistor value when designing the driving circuit impedance. Verify that the operating voltage and current limits remain within the safe operating area curves provided in the technical documentation.

Part Context

This device belongs to the TrenchPLUS standard level FET family from Philips Semiconductors. It employs TrenchMOS technology optimized for general-purpose automotive applications. The component is housed in a plastic single-ended package designed for heatsink mounting. This series provides a balance of low on-resistance and high reliability for demanding power switching environments.

Replacement Considerations

Consult official replacement lists or cross-reference guides for verified substitutes. Ensure any alternative component meets the same voltage, current, and thermal specifications. Verify package compatibility and pinout alignment before implementation.