BUK7L11-34ARC,127

Description：MOSFET N-CH 34V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:c2533a73ef41 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 34V 75A TO220AB
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2506 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：172W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7L11-34ARC,127

Overview

The BUK7L11-34ARC is an N-channel enhancement mode field-effect power transistor utilizing Philips General-Purpose Automotive (GPA) TrenchMOS technology. It features a 34 V drain-source voltage rating and operates with a junction temperature range of -55 °C to +175 °C. The device incorporates an internal gate resistor and meets Q101 compliance standards. Key electrical characteristics include a typical on-state resistance of 8 mΩ at 25 °C, a continuous drain current capability up to 75 A limited by the package, and a total power dissipation of 172 W at 25 °C mounting base temperature.

Feature Summary

Built-in ESD protection and clamping diodes for enhanced robustness
Q101 compliant design suitable for automotive environments
Integrated internal gate resistor simplifies driver circuit requirements
Rated for high-temperature operation up to 175 °C

Applications

Automotive systems
General purpose power switching
Motor control applications
Lamp driving circuits
Solenoid actuation

Procurement Notes

Verify the specific ordering information against the manufacturer's latest documentation before procurement. Confirm that the SOT78C TO-220 plastic single-ended package matches the mechanical constraints of the target heatsink assembly. Ensure that thermal interface materials are selected to maintain the required junction-to-mounting base thermal resistance under operational load conditions.

Selection Notes

Select this component when designing circuits requiring low on-state resistance and high surge current handling within a standard TO-220 footprint. Consider the 34 V breakdown voltage limit when determining appropriate safety margins for inductive loads. Evaluate the thermal management strategy carefully, as continuous current ratings decrease significantly as the mounting base temperature rises above ambient levels.

Part Context

This part belongs to the TrenchPLUS standard level FET family developed using GPA TrenchMOS technology. It is designed specifically for general-purpose automotive applications where reliability and ruggedness are critical. The device represents a transition from older Philips Semiconductors branding to NXP USA Inc., maintaining the established performance specifications for power switching tasks.