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The BUK7M10-40EX is a standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a continuous drain current of 56 A at 25 °C mounting base temperature. The device exhibits a maximum drain-source on-state resistance of 10 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 62 W under specified thermal conditions, with a junction temperature range spanning from -55 °C to +175 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component meets all applicable AEC-Q101 qualification requirements for the intended automotive environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Select this component for designs requiring low on-state resistance and robust automotive reliability. Evaluate the LFPAK33 package dimensions against available PCB real estate constraints. Consider the 175 °C operating temperature rating when designing for thermally demanding environments or high ambient temperature scenarios.
This part belongs to the Nexperia BUK7M series of N-channel MOSFETs. These devices are engineered using TrenchMOS technology to deliver high power density and low conduction losses. The series is specifically designed to meet the rigorous demands of modern automotive electronics while maintaining compatibility with standard surface mount manufacturing processes.
BUK7M10-40E