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The Nexperia BUK7M12-40EX is a standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a continuous drain current of 48 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 55 W under specified conditions, with a junction temperature range spanning from -55 °C to +175 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component meets all applicable RoHS and REACH requirements relevant to your target market before finalizing procurement specifications.
Select this component when designing circuits requiring robust automotive-grade reliability and high thermal stability. The LFPAK33 package offers enhanced thermal performance suitable for space-constrained PCB layouts. Ensure gate drive voltages align with the standard level gate requirements for optimal switching efficiency.
This part belongs to Nexperia's portfolio of automotive-qualified power MOSFETs designed for demanding electrical environments. The LFPAK33 package provides a compact footprint with improved heat dissipation capabilities compared to traditional surface-mount packages, supporting higher current densities.
Direct substitutes include other Nexperia parts within the BUK7M series sharing identical pinouts and package dimensions, such as the BUK7M11-40E or BUK7M16-40E, provided their electrical parameters meet the design requirements.
Yes, the datasheet specifies that the device is repetitive avalanche rated, allowing it to withstand repeated avalanche energy events within its specified limits.
The absolute maximum DC gate-source voltage rating is limited to -20 V to +20 V across the operating junction temperature range.