BUK7M15-60EX

$0.75

Description：MOSFET N-CH 60V 42.9A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0320fb179f08 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 42.9A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：42.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：19.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1262 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：62W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK7M15-60EX

Overview

The BUK7M15-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 43 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 15 mΩ at VGS = 10 V and 25 °C. Total power dissipation reaches 62 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Features true standard level gate operation with threshold voltage greater than 1 V at 175 °C
Supports thermally demanding environments with a 175 °C junction temperature rating
Includes repetitive avalanche rating for enhanced ruggedness

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the LFPAK33 (SOT1210) outline drawing for PCB footprint compatibility. Confirm RoHS compliance status through the manufacturer's latest product change notification or datasheet revision history before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a single N-channel switch with low conduction losses in a compact surface-mount form factor. The 15 mΩ RDS(on) minimizes heat generation during high-current operations. Verify that the gate drive voltage aligns with the standard level requirements for optimal performance. Consider the thermal resistance characteristics and available board space for the mounting base connection to ensure adequate heat dissipation within the 175 °C limit.

Part Context

This part belongs to the Nexperia BUK7M series of standard level N-channel MOSFETs. These devices are engineered using TrenchMOS technology to deliver high current density and low on-resistance. The series is widely utilized in automotive and industrial sectors where reliability under thermal stress is critical. The LFPAK33 package provides a robust solution for power management applications requiring efficient thermal transfer from the junction to the mounting base.