BUK7M17-80EX

$0.88

Description：MOSFET N-CH 80V 43A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:da4b575451cb Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 43A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：29.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2031 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK7M17-80EX

Overview

The BUK7M17-80EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 80 V and a maximum continuous drain current of 43 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 17 mΩ at 10 V gate drive. Total power dissipation reaches 79 W under specified conditions. Thermal resistance from junction to mounting base is typically 1.58 K/W. The component supports a junction temperature range from -55 °C to 175 °C.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Rated for repetitive avalanche energy operation
Maintains true standard level gate threshold voltage above 1 V at elevated temperatures

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the requested part number matches the LFPAK33 package variant. Ensure compliance with RoHS directives and REACH regulations as stated in the product data sheet. Validate that the component status remains active for production use before finalizing procurement plans.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal performance. The low on-state resistance minimizes conduction losses in power switching circuits. The wide operating temperature range allows functionality in thermally demanding environments. Ensure gate drive voltages align with the standard level requirements for optimal efficiency.

Part Context

This device belongs to the Nexperia BUK7M series of N-channel MOSFETs designed for automotive and industrial markets. The series leverages TrenchMOS technology to deliver high current handling capabilities within compact surface-mount packages. These components are engineered to meet stringent automotive qualification standards while providing efficient power management solutions.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pin configurations and thermal characteristics when evaluating potential replacements.