ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 35.8A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：35.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1055 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：55W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The BUK7M19-60EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 36 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 19 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 55 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Repetitive avalanche rated for robust operation in demanding environments
- True standard level gate with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '71960E' with the datasheet to authenticate the part upon receipt.
Selection Notes
Select this component for designs requiring a standard level gate compatible with typical 10 V drive signals. The LFPAK33 package offers efficient thermal management suitable for thermally demanding environments. Consider the 19 mΩ on-state resistance for minimizing conduction losses in low-side switching applications operating within the 60 V voltage range.
Part Context
This device belongs to Nexperia's portfolio of N-channel TrenchMOS standard level MOSFETs. It is designed specifically for automotive reliability, adhering to AEC-Q101 standards. The LFPAK33 package provides a compact solution with enhanced thermal performance compared to traditional packages, supporting junction temperatures up to 175 °C.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification.
