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Product Detailed Parameters
- Description：MOSFET N-CH 40V 33A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：593 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK7M21-40EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 40 V and a continuous drain current of 33 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 21 mΩ at 25 °C and 41 mΩ at 175 °C junction temperature. Total power dissipation reaches 44 W under specified conditions. The component supports a junction temperature range from -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to the AEC-Q101 automotive standard for high-performance applications
- Capable of operating reliably in thermally demanding environments with a 175 °C junction temperature rating
- Features true standard level gate drive characteristics with a threshold voltage greater than 1 V at elevated temperatures
- Includes repetitive avalanche rating for enhanced ruggedness
Applications
- 12 V automotive systems
- Motors, lamps, and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure that the requested quantity aligns with manufacturer minimum order requirements and standard shipping configurations. Confirm compliance with RoHS and REACH directives as stated in the product data sheet prior to finalizing procurement orders.
Selection Notes
Select this component for designs requiring automotive-grade reliability and operation up to 175 °C junction temperature. The LFPAK33 package offers a compact footprint suitable for space-constrained PCB layouts while providing robust thermal performance through its mounting base connection. Evaluate the 21 mΩ on-state resistance against system efficiency targets and ensure gate drive voltages are compatible with the standard level gate threshold specifications.
Part Context
This device belongs to Nexperia's portfolio of N-channel TrenchMOS power MOSFETs designed for automotive and industrial markets. The LFPAK33 package variant provides a balance between electrical performance and thermal management capabilities. As an AEC-Q101 qualified part, it meets stringent automotive quality standards, making it suitable for critical vehicle electronics where long-term stability and high-temperature resilience are required.
Replacement Considerations
Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains compatibility with the LFPAK33 (SOT1210) package outline and matches critical parameters such as 40 V breakdown voltage and similar on-state resistance values.
