BUK7M22-80EX

$0.68

Description：MOSFET N-CH 80V 37A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a3878ddffdd0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 37A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：23.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1643 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK7M22-80EX

Overview

The BUK7M22-80EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 80 V and a maximum continuous drain current of 37 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 22 mΩ at 10 V gate drive. Total power dissipation reaches 75 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Qualified to AEC-Q101 automotive standards for high-performance applications
Capable of withstanding thermally demanding environments with a 175 °C operating limit
Features true standard level gate characteristics maintaining threshold voltage above 1 V at elevated temperatures
Includes repetitive avalanche rating for enhanced ruggedness

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if utilized in automotive contexts. Confirm thermal management designs align with the provided power dissipation limits and thermal resistance data before finalizing procurement.

Selection Notes

Select this component for circuits requiring robust N-channel switching with low on-resistance in compact surface-mount form factors. The LFPAK33 package offers efficient heat dissipation suitable for automotive loads. Evaluate gate charge parameters against driver capabilities to ensure optimal switching speeds and minimize power losses during operation.

Part Context

This part belongs to the Nexperia BUK7M series of N-channel MOSFETs designed for automotive and industrial power switching. The series leverages TrenchMOS technology to deliver high current handling within small footprints. These devices are engineered to meet stringent automotive reliability standards while providing efficient power management solutions.