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The BUK7M4R3-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 superjunction technology. It features a drain-source voltage of 40 V and a continuous drain current of 95 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 4.3 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 90 W under specified thermal conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the requested part number matches the exact marking code and package variant required for the design. Cross-reference the latest datasheet revision to confirm compliance with current automotive qualification standards before finalizing procurement orders.
Select this component for designs requiring automotive-grade reliability and high current handling in compact surface-mount configurations. Evaluate the thermal resistance from junction to mounting base to ensure adequate heat dissipation for the intended load. Confirm that the gate drive voltage supports the standard level operation and that the PCB layout accommodates the LFPAK33 footprint dimensions for optimal thermal performance.
This device belongs to Nexperia's BUK7M series of standard level N-channel MOSFETs designed for automotive environments. It utilizes Trench 9 technology to achieve superior efficiency compared to previous generations. The LFPAK33 package integrates a copper clip for enhanced thermal conductivity and mechanical stability, distinguishing it from standard plastic packages while maintaining compatibility with automated optical inspection processes.
BUK9M4R3-40HX