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The BUK7M9R5-40HX is an automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The typical drain-source on-state resistance is 9.5 mΩ at 25 °C, rising to 18.4 mΩ at 175 °C. Total power dissipation is rated at 55 W with a thermal resistance from junction to mounting base of 2.74 K/W maximum. The device supports a junction temperature range from -55 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target automotive application. Cross-reference the marking code '79H540' with the datasheet to authenticate the part number and manufacturing date code upon receipt.
Select this component for designs requiring a 40 V N-channel MOSFET with a maximum operating temperature of 175 °C. The LFPAK33 package is suitable for applications needing high current handling and robust mechanical solder joints via gull wing leads. Ensure the gate drive voltage supports the standard level gate requirements for optimal RDSon performance.
This device belongs to Nexperia's BUK7M series of automotive qualified MOSFETs. It utilizes Trench 9 technology within the LFPAK33 (SOT1210) plastic surface-mounted package. The product is designed specifically for demanding automotive environments, offering improved ruggedness compared to standard packages through its copper clip construction.
BUK7M15-40H
The maximum junction temperature is 175 °C.
Yes, the BUK7M9R5-40H is repetitive avalanche rated.