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The BUK7S0R5-40HJ is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within a copper-clip LFPAK88 package. It meets beyond AEC-Q101 requirements for high performance and reliability. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 500 A at 25 °C mounting base temperature, and total power dissipation of 375 W. The typical drain-source on-state resistance is 0.47 mΩ at 25 °C junction temperature. Gate-drain charge is typically 32 nC.
Verify the specific ordering suffix J against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the exact part number BUK7S0R5-40HJ for compatibility with design specifications. Cross-reference the datasheet version date to confirm the most recent technical data is being utilized for procurement decisions.
Select this component for applications requiring high current handling up to 500 A and robust thermal management in space-constrained automotive designs. The LFPAK88 package offers a smaller footprint than older wire bond packages like D²PAK while maintaining high power density. Consider the tight VGS(th) limits if paralleling multiple MOSFETs is required for higher current capacity in the target circuit design.
This device belongs to Nexperia's BUK7S series of automotive qualified N-channel MOSFETs. It utilizes advanced Trench 9 superjunction technology housed in the LFPAK88 (SOT1235) surface-mount package. The series is designed to meet rigorous automotive reliability standards, offering enhanced performance over previous generations in terms of on-state resistance and thermal efficiency.
BUK7S1R5-40H